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Technology Development Intern - GaN HV Semiconductor Devices



 Responsibilities:
  • Device simulation, characterization, data analysis.
  • Support for characterization of high–voltage power devices.
  • Establish correlations between product yield, pcm electrical data and in-fab SPC data, and use this to optimize yield of several families of high-voltage smart-power products.  
  • Monitor technologies via statistical analysis of pcm and in-line data, in order to eliminate yield problems.
  •   
Experience required: 
Prior semiconductor research or internship.
 
Education: 
Minimum BS degree in EE, Physics, Materials Science or similar; with emphasis on device physics & semiconductor processing. Prefer students in MSEE or PhD program with focus in power device/power electronics.



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